Photographer: Siesja Kamphuis

dr. K. (Katerina) Dohnalová


  • Faculty of Science
    Van der Waals-Zeeman Instituut
  • Visiting address
    Science Park 904  Amsterdam
    Room number: C4.245
  • Postal address:
    Postbus  94485
    1090 GL  Amsterdam
  • k.dohnalova@uva.nl
    T: 0205255793

2016

  • Dohnalová, K., Nestoklon, M., Poddubny, A. N., & Voisin, P. (2016). Tuning optical properties of Ge nanocrystals by Si shell. The Journal of Physical Chemistry. C, 120, 18901-18908. [details]
  • Dohnalová, K., Bruhn, B., Brenny, B. J. M., Dekker, S., & Schall, P. (2016). Multi-chromatic silicon nanocrystals. Light: Science & Applications[details]

2014

  • Dohnalová, K., Gregorkiewicz, T., & Kůsová, K. (2014). Silicon quantum dots: surface matters. Journal of Physics-Condensed Matter, 26(17), 173201. DOI: 10.1088/0953-8984/26/17/173201 [details]
  • Saeed, S., Buters, F., Dohnalova, K., Wosinski, L., & Gregorkiewicz, T. (2014). Structural and optical characterization of self-assembled Ge nanocrystal layers grown by plasma-enhanced chemical vapor deposition. Nanotechnology, 25(40), 405705:. DOI: 10.1088/0957-4484/25/40/405705 [details]
  • Saeed, S., de Jong, E. M. L. D., Dohnalova, K., & Gregorkiewicz, T. (2014). Efficient optical extraction of hot-carrier energy. Nature Communications, 5, 4665. DOI: 10.1038/ncomms5665 [details / files]
  • Poddubny, A. N., & Dohnalová, K. (2014). Direct bandgap silicon quantum dots achieved via electronegative capping. Physical Review B, 90(24), [245439]. DOI: 10.1103/PhysRevB.90.245439 [details] [PDF]

2013

  • Dohnalova, K., Saeed, S., Poddubny, A. N., Prokofiev, A. A., & Gregorkiewicz, T. (2013). Thermally activated emission from direct bandgap-like silicon quantum dots. ECS J.Solid State Science Technology, 2(6), R97-R99. DOI: 10.1149/2.004306jss [details] [PDF]
  • Dohnalová, K., Poddubny, A. N., Prokofiev, A. A., de Boer, W. D. A. M., Umesh, C. P., Paulusse, J. M. J., ... Gregorkiewicz, T. (2013). Surface brightens-up Si quantum dots: direct bandgap-like size-tunable emission. Light: Science & Applications, 2, e47. DOI: 10.1038/lsa.2013.3 [details] [PDF]
  • Doğan, I., Kramer, N. J., Westermann, R. H. J., Dohnalová, K., Smets, A. H. M., Verheijen, M. A., ... Sanden, M. C. M. (2013). Ultrahigh throughput plasma processing of free standing silicon nanocrystals with lognormal size distribution. Journal of Applied Physics, 113(13), 134306. DOI: 10.1063/1.4799402 [details] [PDF]
  • Svreck, V., Dohnalova, K., Mariotti, D., Trinh, M. T., Limpens, R., Mitra, S., ... Kond, M. (2013). Dramatic Enhancement of Photoluminescence Quantum Yields for Surface-Engineered Si Nanocrystals within the Solar Spectrum. Advanced Functional Materials, 23(48), 6051-6058. DOI: 10.1002/adfm.201301468 [details]

2012

  • Dohnalová, K., Fučiková, A., Umesh, C. P., Humpoličková, J., Paulusse, J. M. J., Valenta, J., ... Gregorkiewicz, T. (2012). Microscopic origin of the fast blue-green luminescence of chemically synthesized non-oxidized silicon quantum dots. Small, 8(20), 3185-3191. DOI: 10.1002/smll.201200477 [details]

2011

  • Ha, N. N., Cueff, S., Dohnalová, K., Trinh, M. T., Rizk, R., Labbé, C., ... Gregorkiewicz, T. (2011). Photon cutting for excitation Er3+ions in SiO2 sensitized by Si qunatum dots. Physical Review B, 84(24). DOI: 10.1103/PhysRevB.84.241308 [details]
  • Ha, N. N., Dohnalová, K., & Gregorkiewicz, T. (2011). Evaluation of free carrier losses to 1.54 mu m emission in Si/Si: Er nanolayers on SOI substrate for optical gain observation. Optical Materials, 33(7), 1094-1096. DOI: 10.1016/j.optmat.2010.08.025 [details]
  • Timmerman, D., Valenta, J., Dohnalová, K., de Boer, W. D. A. M., & Gregorkiewicz, T. (2011). Step-like enhancement of luminescence quantum yield of silicon nanocrystals. Nature Nanotechnology, 6, 710-713. DOI: 10.1038/NNANO.2011.167 [details]
  • Wang, Y., Liu, K., Liu, X., Dohnalová, K., Gregorkiewicz, T., Kong, X., ... Zhang, H. (2011). Critical shell thickness of core/shell upconversion luminescence nanoplatform for FRET application. The Journal of Physical Chemistry Letters, 2(17), 2083-2088. DOI: 10.1021/jz200922f [details]

2010

  • Ha, N. N., Dohnalová, K., Gregorkiewicz, T., & Valenta, J. (2010). Optical gain of the 1.54 μm emission in MBE-grown Si:Er nanolayers. Physical Review B, 81(19), 195206-195206. DOI: 10.1103/PhysRevB.81.195206 [details] [PDF]
  • Ha, N. N., Dohnalová, K., Gregorkiewicz, T., & Valenta, J. (2010). Publisher's note: Optical gain of the 1.54 μm emission in MBE-grown Si:Er nanolayers [Phys. Rev. B 81, 195206 (2010)]. Physical Review B, 81(23), 239902(E). DOI: 10.1103/PhysRevB.81.239902 [details]
  • Ha, N. N., Dohnalová, K., Gregorkiewicz, T., & Valenta, J. (2010). Upper limit of optical gain in MBE-grown Si:Er. Physical Review B, B(81), 195206: 1-6-239902:1. [details]
  • de Boer, W. D. A. M., Timmerman, D., Dohnalová, K., Yassievich, I. N., Zhang, H., Buma, W. J., & Gregorkiewicz, T. (2010). Red spectral shift and enhanced quantum efficiency in phonon-free photoluminescence from silicon nanocrystals. Nature Nanotechnology, 5(12), 878-884. DOI: 10.1038/nnano.2010.236 [details]

2017

  • Dohnalová, K., & Kůsová, K. (2017). Organically capped silicon nanocrystals. In K. D. Sattler (Ed.), Silicon Nanomaterials Sourcebook. CRC Press/Taylor & Francis. [details]

2016

  • Dohnalová, K., Bruhn, B., & Brenny, B. J. M. (2016). White emitting silicon nanocrystals – engineering emission by e-beam irradiation (Patent No. N2017437.) [details]
  • Dohnalová, K., Bruhn, B., Brenny, B. J. M., Dekker, S., & Schall, P. (2016). White emitting silicon nanocrystals – blue, green and red color centers. Poster session presented at E-MRS Spring 2016, . [details]
  • van Dam, B., Dohnalová, K., Marino, E., & Nie, H. (2016). Single quantum dot study of full-color carbon quantum dots. Poster session presented at Veldhoven 2016, . [details]

2009

  • Dohnalová, K., Kůsová, K., Zidek, K., Fučiková, A., Cibulka, O., & Pelant, I. (2009). Method for the preparation of optically clear solution of silicon nanocrystals with short-wavelength luminescence (Patent No. EP 2279231 A1 .) [details]

Award

  • Dohnalová, Katerina (2013): Minerva prize.
  • Dohnalová, Katerina (2012): Amsterdam Innovation and Science Award 2012.
  • Dohnalová, Katerina (2012): Young Scientist Award.
  • Dohnalová, Katerina (2011): Young Scientist Award.
  • Dohnalová, Katerina (2006): Young scientist award.
  • Dohnalová, Katerina (2003): Doctorat en Cotutelle.
  • Dohnalová, Katerina (2001): Young PhD Material Scientist.

Others

  • Dohnalová, Katerina (participant) (2016): CMD 26 (organising a conference, workshop, ...).
  • Dohnalová, Katerina (participant) (2016): E-MRS Spring 2016 (organising a conference, workshop, ...).

Keynote / Invited lecture

  • Dohnalová, Katerina (invited speaker) (2016): Active role of surface in optical properties of nanoparticles, Academy of science of the Czech Republuc.
  • Dohnalová, Katerina (invited speaker) (2016): Optical properties of non-toxic quantum dots, E-MRS Fall 2016.
  • Dohnalová, Katerina (invited speaker) (2016): Surface engineering of indirect bandgap semiconductor nanoparticles for enhanced optical properties, AMOLF.
  • Dohnalová, Katerina (invited speaker) (2016): Towards enhanced absorption and emission with silicon, Quantsol 2016.
  • van Dam, B. (speaker), Dohnalová, Katerina (speaker), Nie, H. (speaker), Bo, J. (speaker), Zhihe, L. (speaker), Marino, E. (speaker), … Schall, P. (speaker) (2016): Multi-color emission from single carbon dots, E-MRS Spring 2016.
  • van Dam, B. (speaker), Dohnalová, Katerina (speaker), Osorio, C.I. (speaker), Muller, R. (speaker) & Koenderink, A.F. (speaker) (2016): Internal quantum efficiency of carbon passivated silicon quantum dots, E-MRS Spring 2016.
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